[PD方案 MOS VS3620]
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PD方案MOS VS3620
Dual N - Channel Enhancement Mode Power MOSFET 4504
DDAATTAASSHHEEEETT
PD方案MOS VS3620
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter | Symbol | Limit | Unit |
Drain‐Source Voltage | VDS | 45 | V |
Gate‐Source Voltage | VGS | +20 | V |
Drain Current @ Continuous(Note 2) | ID(25℃) | 30 | A |
ID(100℃) | 20 | A | |
Drain Current @ Current‐Pulsed (Note 1) | IDM | 112 | A |
Maximum Power Dissipation (TA=25℃) | PD | 35 | W |
Operating Junction and Storage Temperature Range | TJ,TSTG | ‐55 To 150 | ℃ |
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient (Note 2) | RθJA | 35 | ℃/W |
The 4504 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
l RDS(ON) <22m? @ VGS=4.5V RDS(ON) <15m ? @ VGS=10V
l High Power and current handing capability
l Lead free product is acquired
l Surface Mount Package
Application
l PWM applications
l Load switch
l Power management
PD方案MOS VS3620
标签: PD方案 MOS VS36 PD方案 MOS VS3620 温州市方案 温州市方案厂家
注册资金:500万-1000万
联系人:吴松华
固话:0755-82927451
移动手机:18823722265
企业地址:浙江 温州市 瓯海区